MMBT3904 транзистор NPN характеристики:
- VCBO collector-base voltage open emitter: 60 V
- VCEO collector-emitter voltage open base: 40 V
- VEBO emitter-base voltage open collector: 6 V
- IC collector current (DC): 200 mA
- ICM peak collector current: 200 mA
- IBM peak base current: 100 mA
- Ptot total power dissipation Tamb ≤ 25 °C;: 250 mW
- Tstg storage temperature: -65 150 °C
